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Transistors
2SD2459
Silicon NPN epitaxial planar type
For low-frequency output amplification
4.50.1 1.60.2 1.50.1
Unit: mm
Features
* High collector-emitter voltage (Base open) VCEO * Low collector-emitter saturation voltage VCE(sat) * Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
4.0+0.25 -0.20 2.50.1 3 1.0+0.1 -0.2
0.40.04
1 0.40.08 1.50.1 3
3 2 0.50.08
2.60.1
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 150 150 5 1 1.5 1 150 -55 to +150 cm2 Unit V V V A A W C C
3.00.15
45
1: Base 2: Collector 3: Emitter MiniP3-F1 Package
Marking Symbol: 2E
Note) *: Printed circuit board: Copper foil area of 1 or more, and the board thickness of 1.7 mm for the collector portion
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio Collector-emitter saturation voltage *1 Base-emitter saturation voltage *1 Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO ICBO hFE1 *2 hFE2 *1 VCE(sat) VBE(sat) fT Cob Conditions IC = 10 A, IE = 0 IC = 1 mA, IB = 0 IC = 10 A, IC = 0 VCB = 75 V, IE = 0 VCE = 2 V, IC = 100 mA VCE = 2 V, IC = 500 mA IC = 500 mA, IB = 25 mA IC = 500 mA, IB = 25 mA VCB = 10 V, IE = -50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 120 40 0.11 0.8 90 12 20 0.30 1.2 V V MHz pF Min 150 150 5 0.1 340 Typ Max Unit V V V A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank hFE1 R 120 to 240 S 170 to 340
0.4 max.
Publication date: December 2002
SJC00264BED
1
2SD2459
PC Ta
1.2 Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness
IC VCE
Ta = 25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
10 IC / IB = 20
1.2
Collector power dissipation PC (W)
1.0
1.0
Collector current IC (A)
1
0.8
0.8
IB = 8 mA 7 mA 6 mA 5 mA 4 mA
0.6
0.6 3 mA 2 mA 0.2 1 mA
0.1
Ta = 100C 25C -25C
0.4
0.4
0.01
0.2
0
0
20
40
60
80 100 120 140 160
0
0
2
4
6
8
10
12
0.001 0.01
0.1
1
10
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) IC
100
hFE IC
500 VCE = 2 V
200
fT I E
Ta = 25C VCB = 10 V
Base-emitter saturation voltage VBE(sat) (V)
IC / IB = 20
Forward current transfer ratio hFE
Transition frequency fT (MHz)
400
160
10
25C 1 Ta = -25C 100C
300 Ta = 100C 200 25C -25C 100
120
80
0.1
40
0.01 0.01
0.1
1
10
0 0.01
0.1
1
10
0 -1
-10
-100
Collector current IC (A)
Collector current IC (A)
Emitter current IE (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
60 Ta = 25C f = 1 MHz IE = 0
50
40
30
20
10
0
1
10
100
Collector-base voltage VCB (V)
2
SJC00264BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
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